This datasheet is for EM610FV16 series low power 64Kx16 SRAM. The series is fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range from -40℃ to 85℃.
The EM610FV16 series is a 64K × 16‑bit static RAM fabricated with a 0.18 µm full‑CMOS process. It offers low data‑retention voltage (1.5 V min) for battery‑backed operation and supports an industrial temperature range of –40 °C to 85 °C. The device features three‑state outputs, TTL compatibility, and a 48‑ball fine‑pitch BGA package (0.75 mm ball pitch).
Key electrical characteristics include a supply voltage range of 2.7 V–3.6 V, typical power dissipation of 1 W, read and write cycle times of 55 ns–70 ns, and standby currents of 0.3 mA (TTL) and 0.5 µA (CMOS). Absolute maximum ratings specify a pin voltage of –0.2 V to VCC+0.3 V and a power dissipation limit of 1 W.
| Process Technology | 0.18 µm Full CMOS |
|---|---|
| Organization | 64K × 16 bit |
| Supply Voltage | 2.7 V – 3.6 V |
| Input High Voltage | 2.2 V (typ) |
| Input Low Voltage | -0.2 V to 0.6 V |
| Power Dissipation | 1.0 W |
| Operating Temperature | -40 °C to 85 °C |
| Package Type | 48‑FPBGA (0.75 mm ball pitch) |
| Read Cycle Time | 55 ns – 70 ns |
| Write Cycle Time | 55 ns – 70 ns |
The device operates from 2.7 V to 3.6 V.
It is supplied in a 48‑ball fine‑pitch BGA (0.75 mm ball pitch).
The SRAM is rated for –40 °C to 85 °C.
Both read and write cycles are specified as 55 ns to 70 ns.