This datasheet describes Sharp's LH28F004SCB-L12 4‑Mbit SmartVoltage flash memory, covering its architecture, voltage options, and enhanced suspend capabilities. It outlines the device's intended applications, safety considerations, and compliance information.
The document includes detailed sections on memory organization, command definitions, electrical specifications, pin descriptions, and package information, along with tables for voltage combinations, timing, and performance metrics such as read access time and erase cycles.
| Memory size | 4 Mbit (512 KB × 8) |
|---|---|
| Read access time | 120 ns |
| Operating voltage (Vcc) | 2.7 V, 3.3 V or 5 V |
| Vpp voltage options | 3.3 V, 5 V or 12 V |
| Package type | 48‑lead CSP |
| Block erase cycles | 100,000 per block (0.8 M per chip) |
| Block erase time | ~1 s (5 V Vcc, 12 V Vpp) |
| Deep Power‑Down mode | Supported |
It operates at 2.7 V, 3.3 V or 5 V for Vcc, and Vpp can be 3.3 V, 5 V or 12 V.
Each 64‑KB block can be erased up to 100,000 times, with a total of 0.8 million cycles per chip.
The device provides a 120 ns read access time.
It is supplied in a 48‑lead chip‑size package (CSP).