This is a document about LH28F800BG-L/BGH-L product. It is a high-density, low-cost, non-volatile, read/write storage solution for a wide range of applications. It can operate at VCC = 2.7 V and VPP = 2.7 V. It has low voltage operation capability, longer battery life and suits for cellular phone application. Its boot, parameter and main-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F800BG-L/BGH-L offer two levels of protection : absolute protection with VPP at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their code security needs.
The document describes the LH28F800BG-L/BGH-L as high-density, low-cost nonvolatile storage solutions featuring SmartVoltage technology. These devices support operation at Vcc and Vpp voltages of 2.7V, 3.3V, or 5V, making them suitable for portable terminals and personal computers where battery life is a priority.
| Memory Capacity | 8 M-bit (512 kB x 16) |
|---|---|
| Operating Voltage Vcc | 2.7V, 3.3V or 5V |
| Operating Voltage Vpp | 2.7V, 3.3V, 5V or 12V |
| Read Access Time (LH28F800BG-L12) | 120 ns at 5.0+/-0.5V |
| Block Erase Cycles | 100,000 times |
Each block can be independently erased up to 100,000 times.
It supports Vcc of 2.7V, 3.3V, or 5V with corresponding Vpp options.