Si9400DY is a P-channel 20-V (D-S) MOSFET manufactured by Vishay Siliconix with a typical on-resistance of 0.40 ohms and a rated current of 2.0 A.
The Vishay Si9400DY is a P‑Channel MOSFET rated for 20 V drain‑source voltage. The datasheet provides detailed electrical parameters such as continuous and pulsed drain currents, on‑resistance, gate threshold voltage and power dissipation limits.
Thermal characteristics, output and transfer curves, and gate charge information are also included to aid circuit designers in selecting and applying this device in their designs.
| Drain‑Source Voltage (VDS) | –20 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) at 150 °C | 2.5 A |
| Pulsed Drain Current (IDM) | 10 A |
| Maximum Power Dissipation at 150 °C | 2.5 W |
| On‑Resistance rDS(on) at VGS = –10 V | 0.13 Ω |
The Si9400DY is rated for a maximum drain‑source voltage of –20 V.
It can handle a continuous drain current of 2.5 A at a junction temperature of 150 °C.
The on‑resistance rDS(on) at VGS = –10 V is 0.13 Ω.
The maximum power dissipation at 150 °C is 2.5 W.