TPIC5303 is a 3-channel independent gate-protected power DMOS array produced by TI, which has a typical impedance of 0.4 ohms, 60V output voltage, 4000V ESD protection, 5A per channel pulsed current and fast switching speed
The TPIC5303 is a monolithic gate‑protected power DMOS array that contains three independent N‑channel enhancement‑mode transistors. It is supplied in a 16‑pin small‑outline surface‑mount (SO) package and operates from –40 °C to 125 °C.
Key specifications include a 60 V drain‑to‑source breakdown voltage, 5 A pulsed current per channel, 4000 V ESD protection, and thermal resistances of 115 °C/W (junction‑to‑ambient) and 64 °C/W (junction‑to‑board). The datasheet provides absolute‑maximum ratings, electrical characteristics, switching behavior, and typical performance curves.
| Pulsed drain current per channel | 5 A |
|---|---|
| Extended ESD capability | 4000 V |
A pulse duration of 10 ms with a 2 % duty cycle is specified.
The device includes integrated zener diodes that provide up to 4000 V of ESD protection.