ZXTDA1M832 is a bipolar transistor produced by Toshiba. It features low saturation voltage, low equivalent on resistance, high collector current, etc. It is suitable for various driving and power management functions.
The ZXTDA1M832 is a dual NPN/PNP transistor combination packaged in a 3 mm × 2 mm Micro Leaded Package (MLP). It offers low on‑state resistance and low saturation voltage, making it suitable for DC‑DC converters, charging circuits, power switches, motor control and LED backlighting.
The document lists absolute maximum ratings, thermal resistance data, and detailed electrical characteristics for both the NPN and PNP devices, including collector‑base and collector‑emitter breakdown voltages, continuous collector currents, and power dissipation limits.
| Collector‑Base Voltage (NPN) | 40 V |
|---|---|
| Collector‑Base Voltage (PNP) | -20 V |
| Collector‑Emitter Voltage (NPN) | 15 V |
| Collector‑Emitter Voltage (PNP) | -12 V |
| Power Dissipation (typical, 25 °C) | 1.5 W |
| Package type | 3 mm × 2 mm MLP |
It is supplied in a 3 mm × 2 mm Micro Leaded Package (MLP).
The typical junction‑to‑ambient thermal resistance is 83.3 °C/W.