The ZXTN2010Z is a 60V NPN low saturation medium power transistor from SEMICONDUCTORS that offers extremely low on state losses, making it ideal for use in DC-DC circuits and various driving and power management functions. Its features include extremely low equivalent on-resistance, 5A continuous current, up to 20A peak current, very low saturation voltages, and excellent hFE characteristics up to 10A. This transistor is suitable for use in emergency lighting circuits, motor driving (including DC fans), solenoid, relay and actuator drivers, DC-DC modules, backlight inverters, power switches and MOSFET gate drivers.
The ZXTN2010Z transistor is packaged in an SOT‑89 outline and provides extremely low on‑state resistance, making it suitable for DC‑DC circuits and power‑management functions. It offers 5 A continuous collector current, up to 20 A peak current, and very low saturation voltages.
Typical applications include emergency‑lighting circuits, motor and fan drivers, solenoid/relay drivers, DC‑DC modules, backlight inverters, power switches, and MOSFET gate drivers. Ordering information, pinout, and detailed electrical characteristics are provided for designers.
| Collector‑emitter breakdown voltage (BVceo) | 60 V |
|---|---|
| Collector‑base breakdown voltage (BVcpo) | 150 V |
| Continuous collector current (Ic) | 5 A |
| Peak pulse collector current | 20 A |
| Package type | SOT‑89 |
It is rated for 60 V.
The device can handle 5 A continuously.
It is supplied in an SOT‑89 surface‑mount package.