VNN7NV04 / VNS7NV04 / VND7NV04 / VND7NV04-1 are fully autoprotected power MOSFETs with features such as linear current limitation, thermal shutdown, short circuit protection, integrated clamp, low current drawn from input pin, diagnostic feedback through input pin, ESD protection, and direct access to the gate of the power MOSFET (analog driving). They are designed for DC up to 50kHz applications.
The VNN7NV04, VNS7NV04, VND7NV04 and VND7NV04-1 are monolithic power MOSFET devices designed in STMicroelectronics VIPower MOS‑3 technology. They replace standard power MOSFETs in DC‑to‑50 kHz applications and provide built‑in linear current limitation, thermal shutdown, over‑voltage clamp, ESD protection and diagnostic feedback through the input pin.
Key specifications include a 45 V internally set over‑voltage clamp, a typical drain‑current limit of 6 A (up to 12 A), total dissipation of 7 W at 25 °C, operation from –40 °C to 150 °C, and ESD protection of 4000 V. The devices are offered in SOT‑223, DPAK and IPAK packages.
| Over‑voltage clamp voltage | 45 V |
|---|---|
| Total power dissipation at 25 °C | 7 W |
| Operating temperature range | -40 °C to 150 °C |
| ESD protection rating | 4000 V |
| Package types | SOT‑223, DPAK, IPAK |
The device’s over‑voltage clamp is internally set at 45 V.
The device operates from –40 °C up to 150 °C.