The document describes the features and characteristics of STP6NC60 and STP6NC60FP MOSFETs, including 600V voltage, 1.0Ω RDS(on), 6A current, high dv/dt capability, and 100% avalanche tested.
This STMicroelectronics handbook provides detailed specifications for the N‑channel PowerMESH™ I MOSFETs STP6NC60, STP6NC60FP and STB6NC60‑1. It includes absolute maximum ratings, thermal data, electrical characteristics, switching performance, and mechanical dimensions for the TO‑220, TO‑220FP, and TO‑262 packages.
The document also contains typical performance graphs, avalanche ratings, and test circuit diagrams, making it a comprehensive reference for designers of high‑current, high‑speed switching power supplies, motor drives, and welding equipment.
| Drain‑source Voltage (Vds) | 600 V |
|---|---|
| Pulsed Drain Current (Id,pulse) | 24 A |
| Avalanche Current (Ia) | 6 A |
The maximum drain‑source voltage is 600 V.
The device is rated for an avalanche current of 6 A.