The M29W400 is a non-volatile memory that can be electrically erased at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. It features fast access time, fast programming time, various erase and protection modes, low power consumption, etc.
The M29W400 series provides 4 Mbit of non‑volatile memory in either a 512 Kb × 8 or 256 Kb × 16 configuration. It operates from a single 2.7 V to 3.6 V supply and offers fast 90 ns access time and typical programming times of 10 ps per byte or 16 µs per word. The devices are available in TSOP48 (12 × 20 mm) and FBGA48 (8 × 6 mm, 0.8 mm pitch) packages, with both normal and reverse pinouts for the TSOP version.
Each block can be erased or programmed independently, with up to 100 000 program/erase cycles per block and a data retention guarantee of 20 years. Features include block‑level protection, erase‑suspend/resume, automatic standby, and an electronic signature (manufacturer code 0x20, device codes 0xEE for M29W400T and 0xEF for M29W400B) for easy identification by programming equipment.
| Memory capacity | 4 Mbit (512 Kb × 8 or 256 Kb × 16) |
|---|---|
| Supply voltage (program/erase/read) | 2.7 V to 3.6 V |
| Access time | 90 ns |
| Programming time (typical) | 10 ps per byte / 16 µs per word |
| Program/erase cycles per block | 100 000 |
| Data retention | 20 years |
| Ambient operating temperature | -40 °C to 85 °C |
| Storage temperature | -65 °C to 150 °C |
The device operates from 2.7 V to 3.6 V for programming, erasing and reading.
Each memory block is rated for 100 000 program/erase cycles.
The memory retains data for up to 20 years under specified conditions.
It operates from –40 °C to 85 °C, with storage temperature from –65 °C to 150 °C.