Samsung DDR SDRAM 256Mb E-die (x4 x8) Data Sheet

256Mb E-die DDR SDRAM Specification


Samsung DDR SDRAM 256Mb E-die (x4 x8) Data Sheet - cover page
Brand
Samsung
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
24
File format
PDF
File size
216 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
5DB06A59D9C561A94523B0A14E85CEA4

About this manual

The K4H560438E‑TC is a 256 Mb E‑die DDR SDRAM offered in x4 and x8 configurations. It is supplied in a 66‑pin TSOP‑II package and supports double‑data‑rate operation up to DDR333.

The datasheet provides detailed electrical characteristics, timing parameters, absolute maximum ratings, and pin‑out information for system designers and verification engineers.

What's inside

  • Key Features
  • Pin Description
  • Package Dimensions
  • Symbol Description
  • Command Truth Table
  • General Description
  • Absolute Maximum Ratings
  • DC Operating Conditions
  • Timing Parameters
  • Component Notes

Specifications

Memory capacity256 Mb
Package type66‑pin TSOP‑II
Supply voltage (VDD)2.3 V – 2.7 V
Maximum operating frequency333 MHz (DDR333)
CAS latency optionsCL = 2.0 – 2.5
Refresh interval7.8 µs (8K/64 ms refresh)

Frequently asked questions

What is the supply voltage range for VDD?

The VDD supply voltage is specified from 2.3 V to 2.7 V.

What is the maximum data rate supported by this DDR SDRAM?

It supports up to DDR333, which corresponds to a 333 MHz clock rate.

What package does the K4H560438E‑TC use?

The device is supplied in a 66‑pin TSOP‑II package.

How much memory does the K4H560438E‑TC contain?

It contains 256 Mb of E‑die DDR SDRAM.

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