AT28LV64B is a low voltage CMOS E2PROM with page write and software data protection features. It operates at a single 3.3V ± 10% supply and supports 3V read and write operation. It has software-protected programming and low power dissipation. It offers fast access time, automatic page write operation, and high reliability.
The AT28LV64B is a 64‑Kbit electrically erasable programmable read‑only memory (EEPROM) that operates from a single 3.3 V supply with low power consumption. It offers fast 200 ns read access, page‑write capability of up to 64 bytes, and built‑in data‑polling and toggle‑bit features for write‑cycle detection.
The document lists electrical characteristics, timing parameters, pin assignments for various packages (PLCC, PDIP, SOIC, TSOP), and ordering information. It also describes hardware and software data‑protection mechanisms and provides absolute maximum ratings and operating temperature ranges for commercial and industrial grades.
| Supply Voltage | 3.3 V ±10 % |
|---|---|
| Active Current | 15 mA |
| Standby Current | 20 µA CMOS |
| Read Access Time | 200 ns |
| Page Write Cycle Time | 10 ms (max) |
| Endurance | 10 000 cycles |
| Data Retention | 10 years |
The read access time is 200 ns.
It can endure up to 10 000 write cycles.
The standby current is less than 20 µA CMOS.