ROHM QSZ3 General‑Purpose Isolated Transistor Datasheet

QSZ3 is a double-tube transistor produced by ROHM. It integrates 2SB1705 and 2SD2670 two transistors, and its package form is TSMT5, which has the characteristics of low VCE(sat) and small package.


ROHM QSZ3 General‑Purpose Isolated Transistor Datasheet - cover page
Brand
General
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
80 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
982EB4E9B1BD392C1A2C9D8A463C36B2

About this manual

The QSZ3 is a general‑purpose isolated transistor (also usable as a diode) offered in a TSMT5 surface‑mount package. It is intended for use in DC‑DC converters, motor drivers, and similar applications where low saturation voltage and a small footprint are required.

The document lists absolute maximum ratings, electrical characteristics, and packaging details, including voltage limits, current capability, power dissipation, and thermal specifications. An appendix contains legal and export‑control notices from ROHM.

What's inside

  • Applications
  • External dimensions
  • Features
  • Equivalent circuit
  • Packaging specifications
  • Absolute maximum ratings
  • Electrical characteristics
  • Electrical characteristic curves
  • Appendix

Specifications

Collector‑base voltage (Vcbo)15 V
Collector‑emitter voltage (Vceo)12 V
Emitter‑base voltage (Vebo)6 V
Power dissipation (Pd)1.25 W
Junction temperature (Tj)150 °C
Storage temperature range-55 to +150 °C
PackageTSMT5
MarkingZ03
Basic ordering unit3000 pieces

Frequently asked questions

What package type does the QSZ3 use?

The QSZ3 is supplied in a TSMT5 surface‑mount package.

What are the voltage limits for the QSZ3 transistor?

The device is rated for a collector‑base voltage of 15 V, collector‑emitter voltage of 12 V, and emitter‑base voltage of 6 V.

What is the power dissipation rating of the QSZ3?

The QSZ3 can dissipate up to 1.25 W.

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