BCW 31, BCW 32, BCW 33 are NPN surface mount silicon epitaxial planar transistors with a maximum power dissipation of 250 mW. The plastic case is SOT-23 and the weight is approximately 0.01 g. The standard packaging is reeled.
This datasheet provides technical data for the BCW 31, BCW 32, and BCW 33 series of general-purpose NPN silicon epitaxial planar transistors designed for surface mounting. The document details maximum ratings including collector-emitter voltage, power dissipation, and current limits under specific testing conditions.
Key electrical characteristics are listed with minimum, typical, and maximum values for parameters such as DC current gain (hFE), saturation voltages, and noise figure. Mechanical information includes the SOT-23 plastic package dimensions and recommended complementary PNP transistors. This manual is written in German.
| Package type | SOT-23 |
|---|---|
| Power dissipation | 250 mW |
| Collector-Emitter voltage (VCE0) | 32 V |
| Peak Collector current (ICM) | 200 mA |
| Junction temperature (Tj) | -65…+150 °C |
| DC current gain (BCW 31) | Min: 190, Typ: -, Max: - |
| DC current gain (BCW 32) | Min: 330, Typ: -, Max: - |
| DC current gain (BCW 33) | Min: 600, Typ: -, Max: - |
The marking code for BCW 31 is D1.
The thermal resistance (RthA) is 420 K/W.