ROHM EMD30 General Purpose Isolated Transistor Datasheet

EMD30 is a dual digital switch launched by ROHM. It has the characteristics of high withstand voltage, low resistance and low power consumption. It can be widely used in DC/DC converters and motor drivers.


ROHM EMD30 General Purpose Isolated Transistor Datasheet - cover page
Brand
General
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
124 KB
Published
01 June, 2012
Updated
30 September, 2023
MD5 checksum
3828CBB61DE74B10F6CBABFEB0623805

About this manual

The EMD30 is a general‑purpose isolated transistor offered by ROHM. It is supplied in an EMT6 package and is intended for use in DC/DC converters and motor driver circuits. The device includes both PNP (DTr1) and NPN (DTr2) digital transistors and can be mounted with EMT3 automatic mounting machines.

The document lists absolute maximum ratings, electrical characteristics, and characteristic curves for both DTr1 and DTr2, covering supply voltage, input voltage, output current, power dissipation, junction temperature, and storage temperature. Packaging details, external dimensions, and equivalent circuit information are also provided.

What's inside

  • Applications
  • Features
  • Structure
  • Equivalent circuit
  • Packaging specifications
  • Absolute maximum ratings
  • Electrical characteristics
  • Electrical characteristic curves
  • Appendix

Specifications

Supply voltage (DTr1)-30 V
Supply voltage (DTr2)50 V
Input voltage (DTr1)-10 to +5 V
Input voltage (DTr2)-10 to +40 V
Output current (DTr1)200 mA
Output current (DTr2)50 mA
Power dissipation (per transistor)120 mW
Junction temperature (max)150 °C
Storage temperature range-55 to +150 °C
Package typeEMT6

Frequently asked questions

Which package is used for the EMD30 transistor?

The EMD30 transistor is supplied in an EMT6 package.

What typical applications are listed for the EMD30 transistor?

Typical applications include DC/DC converters and motor driver circuits.

What is the maximum power dissipation allowed for each transistor?

Each transistor can dissipate up to 120 mW under the specified conditions.

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