Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified sys- tem assembly and thermal man- agement.
The CM100TF-24H is a high‑power, insulated IGBT module designed for three‑phase bridge applications such as AC motor control and welding power supplies. Each module contains six IGBTs and integrated fast‑recovery free‑wheel diodes, mounted on an isolated baseplate for easy heat‑sinking.
The document provides absolute maximum ratings, static and dynamic electrical characteristics, thermal and mechanical data, as well as typical output and transfer curves to aid designers in selecting and integrating the module into high‑frequency switching systems.
| Collector‑Emitter Voltage (VCE(sat)) | 1200 V |
|---|---|
| Continuous Collector Current (Ic) | 100 A |
| Peak Collector Current (Icom) | 200 A |
| Maximum Collector Dissipation (Pd) | 780 W |
| Isolation Voltage (Main Terminal to Baseplate) | 2500 Vrms |
| Weight | 830 g |
| Mounting Torque (M5) | 1.47 – 1.96 N·m |
| Thermal Resistance Junction‑to‑Case (IGBT) | 0.16 °C/W |
| Input Capacitance (Cies) | 20 nF |
| Output Capacitance (Coes) | 7 nF |
The module is rated for a maximum collector‑emitter voltage of 1200 volts.
It can continuously conduct up to 100 amperes of collector current.
The isolation voltage is specified as 2500 Vrms for a 1‑minute AC test.
The module weighs approximately 830 grams.