TLP250(INV) is a photocoupler suitable for gate driving circuit of IGBT or power MOS FET. It consists of a GaAlAs light emitting diode and an integrated photodetector. It has features such as input threshold current, supply current, supply voltage, output current, and switching time.
The TLP250(INV) is a GaAs light‑emitting diode and integrated photodetector designed for gate‑driving circuits of IGBT or power MOSFET devices. It is supplied in an 8‑lead DIP package and includes specifications for input threshold current, supply voltage, output current, and isolation voltage.
Key sections of the document cover maximum ratings, recommended operating conditions, electrical and switching characteristics, and restrictions on product use. The datasheet also lists safety and handling notes for the GaAs material and outlines the intended application range for general electronics.
| Input Threshold Current | 1 mA (MAX) |
|---|---|
| Supply Voltage (VCC) | 10 ~ 35 V |
| Output Current | 2.0 A (MAX) |
| Isolation Voltage | 2500 Vrms |
| Switching Time (tpLH‑tpHL) | 0.5 µs (MAX) |
The recommended supply voltage is 10 V to 35 V.
The device is rated for an isolation voltage of 2500 Vrms.
It can deliver up to 2.0 A of output current.
The typical switching time is 0.5 µs (maximum).