TLP250F is a Schottky diode that features low leakage current, high reverse recovery time, high breakdown voltage and low forward voltage drop
The TLP250F is a GaAs phototransistor optocoupler consisting of an infrared LED and an integrated photodetector in an 8‑lead DIP package. It is intended for gate‑driving circuits of IGBT or power MOSFET devices.
Key specifications include a 5 mA input threshold current, 1 mA supply current, 10‑35 V supply voltage, 1.5 A output current, and a 0.5 µs switching time. The device meets UL1577 and VDE approvals, with an isolation voltage of 2500 V and creepage/clearance of 8 mm. Recommended external components and usage restrictions are also listed.
| Input Threshold Current | 5 mA (Max.) |
|---|---|
| Supply Voltage | 10‑35 V |
| Output Current | 1.5 A (Max.) |
| Switching Time | 0.5 µs (Max.) |
| Weight | 0.54 g |
| Isolation Voltage | 2500 V (Min.) |
| UL Recognition | UL1577, File No.E67349 |
| VDE Approval | DIN VDE0884/06.92, No.76823 |
| Maximum Operating Insulation Voltage | 1140 Vpk |
| Highest Permissible Over Voltage | 6000 Vpk |
| Creepage Distance | 8.0 mm (Min.) |
| Clearance | 8.0 mm (Min.) |
A 0.1 µF bypass capacitor must be connected between pin 8 and pin 5.
The device provides a minimum isolation voltage of 2500 V and a minimum creepage distance of 8.0 mm.
The recommended supply voltage range is 10 V to 35 V.