The Toshiba TLP251 is a GaAs light‑emitting diode and integrated photodetector packaged in an 8‑lead DIP. It is intended for gate‑driving circuits of IGBT or power MOSFET devices, providing direct drive capability for lower‑power IGBTs.
The datasheet lists maximum ratings, electrical and switching characteristics, recommended bypass capacitor, and usage restrictions. It also includes test circuit diagrams and typical performance graphs for design reference.
| Input Threshold Current | 5 mA (max) |
|---|---|
| Supply Voltage (VCC) | 10‑35 V |
| Output Current (Ig) | 0.4 A (max) |
| Isolation Voltage | 2500 Vrms (min) |
| Forward Current (If) | 20 mA |
| Peak Output Current (IopH) | 0.4 A |
The device is rated for a minimum isolation voltage of 2500 Vrms.
The recommended supply voltage (VCC) is between 10 V and 35 V.