TLP251 is a bipolar transistor with a current rating of 3mA and a voltage rating of 4.5V.
The TLP251 is a GaAs light‑emitting diode and integrated photodetector optocoupler packaged in an 8‑lead DIP. It is designed for gate‑driving circuits of IGBTs and power MOSFETs, offering direct drive capability for lower‑power IGBTs.
The document lists maximum ratings, recommended operating conditions, electrical and switching characteristics, and safety restrictions. It also notes the need for a 0.1 µF bypass capacitor between pins 8 and 5 to ensure stable high‑gain operation.
| Input Threshold Current (Ip) | 5 mA (max) |
|---|---|
| Supply Voltage (Voc) | 10‑35 V |
| Output Current (Ig) | 0.4 A (max) |
| Isolation Voltage | 2500 Vrms (min) |
| Forward Current (Ip) | 20 mA |
| Reverse Voltage (VR) | 5 V |
| Junction Temperature (Tj) | 125 °C |
| Operating Frequency | 25 kHz |
The isolation voltage is rated at a minimum of 2500 Vrms.
The device operates with a supply voltage between 10 V and 35 V.