The TLP251F is a GaAs light‑emitting diode and integrated photodetector optocoupler packaged in an 8‑lead DIP. It is intended for gate‑driving circuits of IGBTs and power MOSFETs, offering direct drive capability for lower‑power IGBTs.
The document includes electrical characteristics, pin layout, truth table, and safety restrictions. Users are advised to follow the handling guide for semiconductor devices and to observe the specified operating ranges.
| Input Threshold Current | 5 mA (max) |
|---|---|
| Supply Current | 1 mA (max) |
| Supply Voltage | 10 V ~ 35 V |
| Output Peak Current | 0.4 A (max) |
| Switching Time | 1 µs (max) |
| Isolation Voltage | 2500 V (min) |
| Creepage Distance | 8.0 mm (min) |
| Clearance | 8.0 mm (min) |
The device can deliver up to 0.4 A of output peak current.
It provides a minimum isolation voltage of 2500 V.
A 0.1 µF bypass capacitor should be connected between pin 8 and pin 5.