TLP251F is a 250mA optocoupler
The TLP251F is a gallium‑arsenide light‑emitting diode and integrated photodetector packaged in an 8‑lead DIP. It is intended for gate‑driving circuits of IGBT or power MOSFET devices, offering direct drive capability for high‑power IGBTs.
The datasheet provides electrical characteristics, pin configuration, truth table, and safety information such as isolation voltage, creepage distance, and handling precautions for the GaAs material.
| Input Threshold Current | 5 mA (max) |
|---|---|
| Supply Current | 1 mA (max) |
| Supply Voltage | 10 V to 35 V |
| Output Peak Current | 0.4 A (max) |
| Switching Time | 1 µs (max) |
| Isolation Voltage | 2500 V (min) |
| Creepage Distance | 8.0 mm (min) |
| Clearance | 8.0 mm (min) |
| Package Type | 8‑lead DIP |
A 0.1 µF bypass capacitor must be connected between pin 8 and pin 5.
The device provides a minimum isolation voltage of 2500 V.
Both creepage distance and clearance are specified as a minimum of 8.0 mm.