This document is the datasheet of APT8011JFLL, which introduces the characteristics and parameters of the product
The APT8011JFLL is an 800 V, 51 A N‑channel enhancement‑mode power MOSFET designed for low conduction and switching losses. It features a patented metal‑gate structure and is offered in a SOT‑227 (ISOTOP®) package.
Key specifications include maximum drain‑source voltage, continuous and pulsed drain currents, total power dissipation, on‑state resistance, and detailed capacitance and diode characteristics. The datasheet also lists thermal parameters and handling precautions.
| Drain‑Source Voltage | 800 V |
|---|---|
| Pulsed Drain Current | 204 A |
| Package | SOT‑227 (ISOTOP®) |
The device is rated for a maximum drain‑source voltage of 800 V.
The MOSFET is supplied in a SOT‑227 (ISOTOP®) package.