Si9956DY is a dual N-channel enhancement mode field-effect transistor using TrenchMOS™1 technology. It features low on-state resistance and fast switching. It is suitable for DC-DC converters, DC motor control, lithium-ion battery applications, notebook PCs, and portable equipment applications.
The Si9956DY is a dual N‑channel enhancement mode field‑effect transistor offered in a plastic SOT‑96‑1 (SO8) package. It uses Philips' TrenchMOS™ technology and is intended for low on‑state resistance, fast switching, and applications such as DC‑DC converters, motor control and portable equipment.
The document provides detailed electrical specifications, thermal characteristics, pinning information and typical performance curves, allowing designers to evaluate the device for their circuits.
| Maximum junction temperature (Tj) | 150 °C |
|---|---|
| Typical on‑state resistance (RDS(on)) | 55 mΩ at VGS=10 V, ID=2.2 A |
It operates from –55 °C to +150 °C (storage and junction temperature).