ZXTS1000E6 is a 12V PNP silicon low saturation switching transistor and Schottky diode, features low saturation transistor, high gain (minimum 300), low VF, fast switching Schottky, suitable for mobile telecomms, PCMCIA & SCSI applications.
The ZXTS1000E6 combines a 12 V PNP low‑saturation switching transistor and a Schottky barrier diode in a single 6‑lead SOT‑23 package. It offers high gain (minimum 300), low saturation voltage, and fast switching, making it suitable for mobile telecom, PCMCIA, SCSI, and DC‑DC conversion applications.
Key specifications include collector‑base voltage of –12 V, collector‑emitter voltage of –12 V, continuous collector current of –1.25 A, and a Schottky diode reverse voltage of 40 V. The device operates over a storage temperature range of –55 °C to +150 °C and is supplied in reel‑mounted tape formats.
| Collector‑Base Voltage (V_CBO) | -12 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | -12 V |
| Emitter‑Base Voltage (V_EBO) | 5 V |
| Continuous Collector Current (I_C) | -1.25 A |
| Schottky Diode Reverse Voltage | 40 V |
| Schottky Diode Forward Current | 0.5 A |
| Power Dissipation (single die on, Tj=25 °C) | 0.725 W |
| Storage Temperature Range | -55 °C to +150 °C |
| Junction Temperature (Tj) | 125 °C |
The maximum collector‑emitter voltage is –12 V.
The device can be stored from –55 °C up to +150 °C.