ZXTN2007Z is a 30V NPN low saturation medium power transistor, packaged in SOT89. It features extremely low on-resistance, 6 amps of continuous current, up to 20 amps of peak current, very low saturation voltages, and excellent hFE characteristics up to 20 amps, making it ideal for use in DC-DC converters, MOSFET gate drivers, charging circuits, power switches, and motor control applications.
The ZXTN2007Z is a 30 V NPN low‑saturation, medium‑power transistor packaged in an SOT‑89 outline. Its extremely low on‑state resistance (RDS(on) ≈ 23 mΩ at 6.5 A) and low saturation voltage make it ideal for DC‑DC converters, MOSFET gate drivers, charging circuits, power switches, and motor‑control applications.
The datasheet lists absolute maximum ratings such as a collector‑emitter voltage of 30 V, continuous collector current of 6 A, peak pulse current of 20 A, and power dissipation up to 15 W at 25 °C. Thermal resistance values, detailed electrical characteristics, and the SOT‑89 pad layout with dimensions (e.g., dimension A 1.40‑1.60 mm) are also provided, along with ordering information and global contact details for Zetex.
| Collector‑emitter voltage (BVceo) | 30 V |
|---|---|
| Continuous collector current (Ic) | 6 A |
| Peak pulse current | 20 A |
| Power dissipation at 25 °C | 15 W |
| Collector‑emitter saturation voltage (VCE(sat)) | 35 mV (typical at Ic=0.5 A) |
| Package dimension A (min‑max) | 1.40‑1.60 mm |
The device is rated for a collector‑emitter breakdown voltage of 30 V.
The transistor can operate from –55 °C to +150 °C.