The Toshiba 2SB1015A is a silicon PNP triple‑diffused transistor intended for audio‑frequency power‑amplifier applications. The document provides safety notices, reliability information, and usage guidelines for designers.
Key electrical specifications are listed, including maximum voltage and current ratings, power dissipation, and temperature limits. Detailed characteristic curves and safe‑operating‑area data are also included for circuit design.
| Collector-Base Voltage (VCBO) | -60 V |
|---|---|
| Collector-Emitter Voltage (VCEO) | -60 V |
| Emitter-Base Voltage (VEBO) | -7 V |
| Collector Current (Ic) | -3 A |
| Base Current (Ip) | 0.5 A |
| Collector Power Dissipation (P) | 25 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 to 150 °C |
The datasheet lists a maximum collector current of -3 A.
The collector‑emitter voltage rating is -60 V.
The specified storage temperature range is -55 °C to 150 °C.