This datasheet describes the Toshiba 2SB1481 PNP epitaxial transistor, listing its key electrical parameters such as collector‑base voltage, collector‑emitter voltage, and current gains. It also includes the equivalent circuit diagram and typical performance curves.
The document outlines recommended operating ranges, storage temperature limits, and safety restrictions, emphasizing that the device is intended for general electronics applications and should not be used in safety‑critical or high‑reliability equipment.
| Collector‑Base Voltage (VCBO) | 100 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | 100 V |
| Emitter‑Base Voltage (VEBO) | -5 V |
| Collector Current Pulse | +6 A |
| Base Current (Ip) | -0.3 A |
| Junction Temperature (Tj) | 150 °C |
| Weight (typical) | 1.7 g |
The maximum collector‑emitter voltage is 100 V.
The recommended maximum collector current pulse is +6 A.
Yes, it is intended for general electronics and should not be used in safety‑critical or high‑reliability equipment such as medical or aerospace instruments.