TOSHIBA TIM7785-8L is a low distortion, high power, high gain C-band GaAs FET, with low intermodulation distortion, high power, high gain, broadband internal matching and hermetic package.
This handbook describes the Toshiba TIM7785-8L GaAs FET, a low‑distortion, internally matched power device for C‑band applications. Key features include high output power (up to 39 dBm), high gain (5 dB), low intermodulation distortion (IM3 ≈ ‑44 dBc), and a hermetically sealed package.
The document lists detailed RF performance specifications, electrical characteristics, absolute maximum ratings, and handling precautions. Graphs illustrate output power versus frequency, power versus input power, and power dissipation versus case temperature, while S‑parameter data are provided for design integration.
| Output Power at 1 dB Compression (P1dB) | 39 dBm (typ) |
|---|---|
| Power Gain at 1 dB Compression (G1dB) | 5.0 dB (typ) |
| Gain Flatness | +0.6 dB |
| Power Added Efficiency | 24 % |
| 3rd Order Intermodulation Distortion (IM3) | -44 dBc (typ) |
| Drain‑Source Voltage (VDS) Max | 15 V |
| Gate‑Source Voltage (VGS) Max | 5 V |
| Drain Current (ID) Max | 8 A |
| Total Power Dissipation | 37.5 W |
| Channel Temperature Max | 175 °C |
| Storage Temperature Range | -65 °C to 175 °C |
The TIM7785-8L delivers a typical output power of 39 dBm at 1 dB compression in the 7.7 GHz to 8.5 GHz range.
The device can tolerate up to 15 V drain‑source voltage and 5 V gate‑source voltage.
When soldering, the iron should be grounded and the operation time must not exceed 10 seconds at 260 °C.