Toshiba 2SK2741 Datasheet


Toshiba 2SK2741 Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
276 KB
Published
09 May, 2012
Updated
28 June, 2012
MD5 checksum
3CDA321EBA27C1486504477648B9169E

About this manual

The 2SK2741 is a high‑speed, high‑current N‑channel MOSFET intended for industrial switching, chopper regulator, DC‑DC converter and motor drive applications. The document lists its maximum ratings, electrical characteristics, and thermal data.

Key specifications include a 60 V drain‑source voltage, typical on‑resistance of 0.12 Ω, continuous drain current of 5 A, and a power dissipation limit of 2.5 W. Thermal resistance is 50 °C/W and the device can be stored from –55 °C to 150 °C. The datasheet also details diode ratings, pulse characteristics, and safe operating area curves.

What's inside

  • Electrical Characteristics
  • Maximum Ratings
  • Thermal Characteristics
  • Source‑Drain Diode Ratings
  • Pulse Characteristics
  • Safe Operating Area

Specifications

Drain‑Source Voltage (V_DSS)60 V
On‑Resistance (R_DS(on))0.12 Ω (typ)
Gate Threshold Voltage (V_th)0.8 ~ 2.0 V
Power Dissipation (P_D)2.5 W
Thermal Resistance (RθJA)50 °C/W
Storage Temperature Range-55 °C to 150 °C
Single Pulse Avalanche Energy (E_AS)129 µJ

Frequently asked questions

What is the maximum drain‑source voltage for the 2SK2741?

The device is rated for a maximum drain‑source voltage of 60 V.

What is the typical on‑resistance of the 2SK2741?

Its typical on‑resistance is 0.12 Ω.

What are the storage temperature limits for this MOSFET?

The MOSFET can be stored from –55 °C up to 150 °C.

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