This is a high performance power mosfet device produced by Motorola, which has a fast recovery time source-drain diode and is suitable for low voltage high frequency switching applications in power supplies, converters and PWM motor controls.
The MTD20NOGHD is a N‑channel enhancement‑mode power MOSFET designed for low‑voltage, high‑speed switching in power supplies, converters and PWM motor controls. It features a 20 A continuous drain current, 60 V drain‑source rating, low on‑resistance and an integrated fast‑recovery body diode.
The device is supplied in a DPAK surface‑mount package (Style 2) with recommended land‑pattern dimensions for optimal thermal performance. Detailed electrical characteristics, switching behavior, and safe‑operating‑area limits are provided for designers.
| Drain‑Source Voltage (Vdss) | 60 V |
|---|---|
| Gate‑Source Voltage (Vgss) Continuous | +20 V |
| Continuous Drain Current (Id) | 20 A |
| Total Power Dissipation (Pp) | 40 W |
| Package Type | DPAK (Surface‑Mount) |
The device can handle a continuous drain current of 20 A.
The maximum drain‑source voltage rating is 60 V.