HDTMOS are a series of advanced power MOSFETs which utilize Motorola's High Cell Density TMOS process.
The MMSF7P03HD is a single P‑channel high‑density TMOS power MOSFET designed for low‑voltage, high‑speed switching applications such as dc‑dc converters, portable electronics, and low‑voltage motor control. It is offered in a miniature SO‑8 surface‑mount package that saves board space.
Key data include a 30 V drain‑to‑source breakdown voltage, 7 A continuous drain current, 35 mΩ typical on‑resistance, and a 25 W total power dissipation rating. The document also details safe operating area, soldering precautions, and recommended footprint dimensions for the SO‑8 package.
| Drain‑to‑Source Voltage (VDS) | 30 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | 20 V |
| Continuous Drain Current (ID) | 7.0 A |
| On‑Resistance (RDS(on)) | 35 mΩ |
| Total Power Dissipation (PD) | 25 W |
| Maximum Soldering Temperature | 260 °C |
| Package Type | SO‑8 |
The device is rated for a maximum drain‑to‑source voltage of 30 V.
It can conduct up to 7.0 A continuously at 25 °C.
Soldering temperature should not exceed 260 °C.
The MOSFET is supplied in a miniature SO‑8 surface‑mount package.