BAS32L is a high speed switching diode from NXP, encapsulated in a small hermetically sealed glass SOD80C Surface Mounted Device (SMD) package. It features a high switching speed, low reverse voltage and high reverse peak voltage.
The BAS32L is a high‑speed switching diode offered by NXP Semiconductors in a hermetically sealed glass SOD80C surface‑mounted package. It is designed for applications requiring fast reverse recovery and low forward voltage drop.
The document provides detailed electrical limits, thermal characteristics, pinning, marking, and packaging information, along with test procedures and legal notices for designers and manufacturers.
| Reverse voltage (Va) | 75 V |
|---|---|
| Repetitive peak forward current (I_FRM) | 450 mA |
| Forward current (I_F) | 200 mA |
| Maximum junction temperature (Tj) | 200 °C |
| Thermal resistance, junction‑to‑ambient (RθJA) | 350 K/W |
| Forward voltage at 100 mA (Vf) | 620‑750 mV |
| Diode capacitance at 1 MHz, 0 V (Cj) | 2 pF |
The BAS32L can withstand a reverse voltage of up to 75 V.
It is supplied in a hermetically sealed glass SOD80C surface‑mounted device (SMD) package.
The device can handle up to 450 mA of repetitive peak forward current.