NXP PBSS5350SS 50 V, 2.7 A PNP/PNP Low Vcesat Transistor Product Data Sheet

The PBSS5350SS is a 50V, 2.7A PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.


NXP PBSS5350SS 50 V, 2.7 A PNP/PNP Low Vcesat Transistor Product Data Sheet - cover page
Brand
NXP
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
14
File format
PDF
File size
89 KB
Published
03 July, 2012
Updated
30 September, 2023
MD5 checksum
8CC9ED26C773CAC5E8DADAF18F1D19B8

About this manual

The PBSS5350SS is a PNP/PNP double low Vce(sat) Breakthrough In Small Signal (BISS) transistor housed in a medium power Surface-Mounted Device (SMD) plastic package. It is designed for applications requiring dual low power switches, such as controlling motors and fans, as well as automotive uses. Key features include low collector-emitter saturation voltage, high collector current capability, and high efficiency due to reduced heat generation.

What's inside

  • Product profile
  • Pinning information
  • Ordering information
  • Limiting values
  • Thermal characteristics
  • Characteristics
  • Applications

Specifications

Collector-emitter voltage (Vceo)-50 V
Collector current (Ic)-2.7 A
Package typeSOT96-1

Frequently asked questions

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage is -50 V.

What is the maximum collector current?

The maximum collector current is -2.7 A.

What are the typical applications for this transistor?

It is used for dual low power switches such as motors and fans, and in automotive applications.

Download PDF (89 KB)

More NXP Manuals


View all NXP manuals →