The PBSS5350SS is a low-voltage, low-saturation voltage, double-bipolar transistor from NXP. The rated voltage is 50V and the collector current is 2.7A. The product has high collector current capability, high collector current gain, high efficiency and small size. It is suitable for dual low power switches and automotive applications.
The document describes the PBSS5350SS, a PNP/PNP double low collector-emitter saturation voltage Breakthrough In Small Signal (BISS) transistor. It is designed for use as dual low power switches and in automotive applications.
Key features include high collector current capability, high current gain at high currents, and high efficiency due to less heat generation. The device utilizes a medium power Surface-Mounted Device (SMD) plastic package.
| Collector-emitter voltage (Vceo) | -50 V |
|---|---|
| Collector current (Io) | -2.7 A |
| Peak collector current (Iom) | -5 A |
| Collector-emitter saturation resistance (Rcesat) | 95 mΩ to 140 mΩ |
| Package type | SOT96-1 |
The device is suitable for dual low power switches such as motors and fans, as well as automotive applications.
The maximum total power dissipation depends on the PCB material; it is 0.55 W for FR4 and up to 1.43 W for ceramic PCBs.