This document describes the features and characteristics of the MJL3281A (NPN) and MJL1302A (PNP) complementary bipolar power transistors, which were released by Semiconductor Components Industries, LLC in 2005. These transistors have exceptional safe operating area, NPN/PNP gain matching within 10% from 50 mA to 5 A, excellent gain linearity, high BVCEO, high frequency, and other features. The document also provides information on applications and benefits.
The MJL3281A (NPN) and MJL1302A (PNP) are complementary silicon power transistors designed for high‑end consumer and professional audio applications. They feature a high safe operating area, matched gain within 10 % from 50 mA to 5 A, and high frequency performance.
The document provides maximum ratings (260 V VCEO, 200 W dissipation), detailed electrical characteristics, typical performance curves, and mechanical package dimensions for the TO‑264 (TO‑3PBL) case. Ordering information and thermal resistance data are also included.
| Collector‑Emitter Voltage (VCEO) | 260 V |
|---|---|
| Collector‑Base Voltage (VCBO) | 260 V |
| Emitter‑Base Voltage (VEB) | 5.0 V |
| Continuous Collector Current (IC) | 15 A |
| Total Power Dissipation (PD) | 200 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 0.625 °C·W |
| Package Type | TO‑264 (TO‑3PBL) CASE 340G‑02 |
The transistors are rated for a maximum collector‑emitter voltage of 260 V.
Both devices can handle up to 15 A of continuous collector current.
The maximum power dissipation is 200 W at a case temperature of 25 °C.
They are supplied in a TO‑264 (TO‑3PBL) case, marked as CASE 340G‑02.