ON Semiconductor MC33153 IGBT Gate Driver Datasheet

mc33153 is specifically designed as an igbt driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. although designed for driving discrete and module igbt, this device offers a cost effective solution for driving power mosfets and bipolar transistors. device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. these devices are available in dual–in–line and surface mount packages and include the following features: • high current output stage: 1.0 a source/2.0 a sink • protection circuits for both conventional and sense igbt • programmable fault blanking time • protection against overcurrent and short circuit • undervoltage lockout optimized for igbt’s • negative gate drive capability • cost effectively drives power mosfets and bipolar transistors representative block diagram this device contains 133 active transistors.


ON Semiconductor MC33153 IGBT Gate Driver Datasheet - cover page
Brand
ON Semiconductor
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
16
File format
PDF
File size
133 KB
Published
08 May, 2012
Updated
01 October, 2023
MD5 checksum
AC494840DBB2B080ADC97D6CB2594435

About this manual

The MC33153 is an IGBT gate driver designed for high‑power applications such as AC induction motor control, brushless DC motor control, and uninterruptible power supplies. It can also drive power MOSFETs and bipolar transistors, offering protection features like desaturation, over‑current sensing, and undervoltage detection.

Key features include a 1.0 A source/2.0 A sink output stage, programmable fault blanking, and protection circuits for both conventional and sense IGBTs. The datasheet lists maximum ratings, electrical characteristics, and switching parameters for both SO‑8 and DIP‑8 packages.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Switching Characteristics
  • Operating Description
  • Gate Drive
  • Notes
  • Publication Ordering Information

Specifications

Source Current1.0 A
Sink Current2.0 A
Maximum Power Dissipation (SO‑8)0.56 W
Maximum Power Dissipation (DIP‑8)1.0 W
Thermal Resistance (SO‑8)180 °C/W
Operating Ambient Temperature Range-40 °C to +105 °C
High‑State Input Threshold Voltage2.70 V – 3.2 V

Frequently asked questions

What is the source current capability of the MC33153?

The device can source up to 1.0 A.

What is the sink current capability of the MC33153?

The device can sink up to 2.0 A.

What is the operating ambient temperature range?

The MC33153 operates from –40 °C to +105 °C.

What is the maximum power dissipation for the SO‑8 package?

The SO‑8 package can dissipate up to 0.56 W at 50 °C ambient.

Download PDF (133 KB)

More ON Semiconductor Manuals


View all ON Semiconductor manuals →