The document describes IL211AT/ IL212AT/ IL213AT as optocouplers with a Gallium Arsenide infrared LED and silicon NPN phototransistor. These products provide high electrical isolation and are suitable for high-density applications. They also conform to standards for surface-mounted devices.
The IL211AT/212AT/213AT series are optocouplers with a GaAs infrared LED and silicon NPN phototransistor, offered in a standard SOIC‑8 surface‑mount package. They provide isolation up to 3000 V and are available with three current‑transfer‑ratio (CTR) options: >20 % (IL211AT), >50 % (IL212AT) and >100 % (IL213AT).
The document lists absolute maximum ratings, electrical characteristics, switching performance, and mechanical dimensions, and includes compliance information such as UL1577, RoHS and ozone‑depleting‑substance policies.
| Isolation Voltage | 3000 V |
|---|---|
| CTR (IL211AT) | >20 % |
| CTR (IL212AT) | >50 % |
| CTR (IL213AT) | >100 % |
| Forward Voltage (10 mA) | 1.3‑1.5 V |
| Collector‑Emitter Breakdown Voltage | 30 V |
| Power Dissipation (LED + Detector) | 150 mW |
| Storage Temperature Range | -55 °C to +150 °C |
The series is rated for an isolation voltage of 3000 V.
IL211AT offers >20 % CTR, IL212AT offers >50 % CTR, and IL213AT offers >100 % CTR.
Typical forward voltage is between 1.3 V and 1.5 V at 10 mA.
They can be stored from –55 °C up to +150 °C.