This document describes the features and characteristics of the TELEFUNKEN Semiconductors BZT55C product, including very sharp reverse characteristic, low reverse current level, very high stability, low noise, etc.
The BZT55C silicon epitaxial planar Z‑diode offers very sharp reverse characteristics, low reverse‑current level, high stability and low noise. It is intended for voltage‑stabilisation applications and is available with tighter tolerances.
Key electrical data include a maximum power dissipation of 500 mW, a forward voltage of 1.5 V at 200 mA, a junction temperature rating of 175 °C and a storage temperature range of –65 °C to +175 °C. The datasheet also provides detailed characteristic curves and thermal response information. This manual is written in Japanese.
| Forward Voltage @ 200 mA | 1.5 V |
|---|---|
| Junction Temperature Rating | 175 °C |
| Storage Temperature Range | -65 °C to +175 °C |
At 200 mA the forward voltage is 1.5 V.
The device can be stored from –65 °C up to +175 °C.