The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell.
The MAX2601 and MAX2602 are high‑performance silicon bipolar RF power transistors optimized for portable cellular and wireless equipment. They operate from a single Li‑Ion cell or three NiCd/NiMH cells and provide 1 W of RF output at 900 MHz. The devices include a biasing diode (MAX2602) for accurate temperature‑compensated bias control and require no drain‑switch or negative bias circuitry, improving battery life and system efficiency.
Key specifications include a 3.6 V supply for 1 W output, 58 % collector efficiency, and operation over a temperature range of –40 °C to +85 °C. The transistors are supplied in thermally‑enhanced 8‑pin SOIC packages with a backside heat slug for low inductance and good thermal dissipation. Absolute maximum ratings, DC and AC electrical characteristics, and typical operating curves are provided for design reference.
| Supply Voltage for 1 W Output | 3.6 V |
|---|---|
| Output Power (900 MHz) | 1 W |
| Efficiency | 58 % |
| Operating Temperature Range | -40 °C to +85 °C |
| Collector‑Emitter Voltage (V CES) | 17 V |
| Average Collector Current (I C) | 1200 mA |
A 3.6 V supply provides 1 W of RF power at 900 MHz.
The transistors achieve an efficiency of 58 % when biased for constant‑envelope operation.
They are rated for operation from –40 °C to +85 °C.
The maximum collector‑emitter voltage (V CES) is 17 V.