PHILIPS PMWD18UN Dual N-channel TrenchMOS ultra low level FET Rev. 02 23 February 2004

This document describes the features and characteristics of the PMWD18UN dual N-channel ultra low level FET, including the use of TrenchMOS™ technology, low threshold, and fast switching.

Brand
Philips
File format
PDF
Published
07 May, 2012
Updated
28 September, 2023
MD5 checksum
3896F7DF56D63ED6FFF9C5A4A6D1A2C6
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PHILIPS PMWD18UN Dual N-channel TrenchMOS ultra low level FET Rev. 02 23 February 2004 PDF
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