This data sheet mainly describes the characteristics of the 2MBI200U4H-120 IGBT module
This document is a technical specification sheet for the Fuji Electric 2MBI200U4H-120 IGBT module. It outlines the device name, type, and drawing numbers, and includes absolute maximum ratings, electrical characteristics, thermal data, and reliability test procedures.
Key data include a collector‑emitter voltage rating of 1200 V, a continuous collector current of 200 A, pulse current of 400 A, and a power dissipation capability of 1040 W. Thermal resistance, mounting torque values, storage conditions, and safety warnings are also detailed to guide proper integration and handling of the module.
| Collector‑Emitter voltage (VCES) | 1200 V |
|---|---|
| Gate‑Emitter voltage (VGES) | ±20 V |
| Continuous collector current (Ic) | 200 A |
| Pulse collector current (Ic pulse) | 400 A |
| Collector power dissipation (Pc) | 1040 W |
| Junction temperature (Tj) | +150 °C |
| Storage temperature range | -40 °C to +125 °C |
| Isolation voltage (VISO AC) | 2500 VAC (1 min) |
| Mounting screw torque | 2.5 Nm to 3.5 Nm |
| Terminal torque | 3.5 Nm to 4.5 Nm |
The module is rated for a collector‑emitter voltage of 1200 V.
Store the module between –40 °C and +125 °C.