This document introduces the Radiation Hardened MOSFET series developed by Intersil, specifically designed for commercial and military space applications. These products have enhanced immunity to Single Event Effects (SEE), particularly Single Event Gate Rupture (SEGR), combined with 100K RADS of total dose hardness, making them ideal for harsh space environments. The MOSFET series includes N-Channel and P-Channel devices with a variety of voltage, current, and on-resistance ratings. Numerous packaging options are available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. It can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations from the data she
The FSYA450D and FSYA450R are radiation‑hardened N‑channel power MOSFETs designed for space and military applications. They provide high voltage (500 V) and current capability (11 A) while maintaining low on‑resistance (0.530 Ω) and robust single‑event effect immunity.
The devices are offered in SMD‑1 leadless ceramic packages and are screened to commercial, TXV, or space‑grade MIL‑S‑19500 standards. Detailed electrical specifications, screening procedures, and radiation‑hard data packages are included in this datasheet.
| Total Radiation Dose Hardness | 100 kRad (Si) |
|---|---|
| Single Event LET Immunity | 36 MeV·mg⁻¹·cm⁻² |
| Package Type | SMD‑1 (3‑pad ceramic leadless) |
It is qualified for up to 100 kRad total dose (Si).