The 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS are general purpose PNP silicon transistors from ROHM with excellent hFE linearity.
This datasheet provides the key specifications for the ROHM 2SA1037AK, 2SA1576A and 2SA1774 general‑purpose PNP silicon transistors. It includes features, structure, absolute maximum ratings, electrical characteristics, and packaging information.
The document also contains characteristic curves for collector‑emitter saturation, gain bandwidth, and output capacitance, helping designers evaluate performance under various bias conditions.
| Collector‑Base Voltage (Vcbo) | -60 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | -50 V |
| Emitter‑Base Voltage (Vebo) | -6 V |
| Collector Current (Ic) | 0.15 A (DC) |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 °C to +150 °C |
| Transition Frequency (ft) | 140 MHz |
| DC Current Gain (hFE) | 120 – 560 |
| Output Capacitance (Cob) | 4.0 – 5.0 pF |
The maximum collector‑emitter voltage is -50 V.
The transition frequency is 140 MHz.
The DC current gain ranges from 120 to 560.
They can be stored from -55 °C up to +150 °C.