Vishay Si4858DY N-Channel MOSFET Datasheet

Si4858DY Vishay Siliconix New Product is a N-Channel 30-V (D-S) MOSFET with excellent performance. It is suitable for DC/DC Converters and Synchronous Rectifiers applications.


Vishay Si4858DY N-Channel MOSFET Datasheet - cover page
Brand
Vishay
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
42 KB
Published
04 May, 2012
Updated
30 September, 2023
MD5 checksum
800951DB2F3F64D9839415310258FD23

About this manual

The Si4858DY is a 30‑V N‑channel power MOSFET optimized for low‑side synchronous rectifier operation. It is offered in an SO‑8 package and is intended for use in DC‑DC converters and synchronous rectifiers.

Key specifications include a continuous drain current of 20 A at 25 °C, a pulsed drain current of 60 A, typical on‑state resistance of 0.0040 Ω at VGS = 10 V, and a maximum power dissipation of 3.5 W at 25 °C. Thermal resistance is rated at 67 °C/W (junction‑to‑ambient).

What's inside

  • Features
  • Applications
  • Product Summary
  • Absolute Maximum Ratings
  • Thermal Resistance Ratings
  • Specifications
  • Typical Characteristics
  • Thermal Transient Impedance

Specifications

Drain‑Source Voltage (VDS)30 V
Gate‑Source Voltage (VGS)20 V
On‑State Resistance rDS(on) @ VGS=10 V, ID=20 A0.0040 Ω (typ)

Frequently asked questions

What is the on‑state resistance of the Si4858DY at VGS = 10 V?

The typical on‑state resistance is 0.0040 Ω when VGS is 10 V and ID is 20 A.

What are the absolute maximum voltage ratings for the Si4858DY?

The device is rated for a maximum drain‑source voltage of 30 V and a maximum gate‑source voltage of 20 V.

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