This IGBT has a 600V rating, its low VCE(on) and high temperature short circuit capability make it suitable for power electronic applications such as motor drives, inverters, UPS, power supplies and solar inverters.
The MGW14N60ED is a 600 V N‑channel enhancement‑mode insulated‑gate bipolar transistor (IGBT) co‑packaged with a soft‑recovery free‑wheeling diode in a TO‑247 case. It offers low on‑voltage, high short‑circuit capability and ESD‑protected operation, making it suitable for high‑frequency power conversion applications.
Key electrical characteristics include a collector‑emitter voltage rating of 600 V, continuous collector current of 18 A at 25 °C, and a typical on‑state voltage of 2.0 V at 10 A. The device can dissipate up to 112 W at 25 °C and operates over a junction temperature range of –55 °C to 150 °C.
| Collector‑Emitter Voltage (VCES) | 600 V |
|---|---|
| Gate‑Emitter Voltage (VGE) | +20 V |
| Continuous Collector Current (Io25) | 18 A |
| On‑State Voltage (VGE(on)) | 2.0 V typical at 10 A |
| Total Power Dissipation (Pp) @ 25 °C | 112 W |
| Junction Temperature Range | -55 °C to 150 °C |
| Short‑Circuit Withstand Time (tsc) | 10 µs |
The device is rated for a collector‑emitter voltage of 600 V.
The typical on‑state voltage is 2.0 V at a collector current of 10 A.
It is housed in a TO‑247 case.
The maximum power dissipation is 112 W at 25 °C.