This Motorola datasheet provides detailed specifications for the complementary silicon power transistors D44VH (NPN) and D45VH (PNP). It includes key electrical parameters, maximum ratings, and thermal characteristics for high‑speed switching applications such as regulators and inverters.
The document also lists package dimensions for the TO‑220AB case, mechanical notes, and legal disclaimer information. All data are presented at a junction temperature of 25 °C unless otherwise noted.
| Collector‑Emitter Voltage (VCEO) | 80 V |
|---|---|
| Collector Current (Continuous) | 15 A |
| Total Power Dissipation (PD) | 83 Watts |
| Thermal Resistance, Junction‑to‑Case (Rac) | 15 °C·W |
| Current Gain Bandwidth Product (fT) | 50 MHz |
| Delay Time (td) | 50 ns |
The maximum collector‑emitter voltage is 80 V.
The devices can dissipate up to 83 W at a junction temperature of 25 °C.
The junction‑to‑case thermal resistance is 15 °C·W.
The current gain bandwidth product is specified as 50 MHz.