This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.8 watts output power and 48% minimum power added efficiency under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior performance, Motorola’s planar GaAs MESFET process is employed. The device is packaged in the PFP–16 Power Flat Package which gives excellent thermal performance through a solderable backside contact.
This datasheet describes the MRFIC0913 900 MHz GaAs integrated power amplifier intended for GSM Class IV handsets. It includes the device’s electrical characteristics, recommended operating ranges, and typical performance figures such as output power and power‑added efficiency.
The document also gives design guidance for RF circuit implementation, biasing, and power control using the MC3319 support IC, as well as package dimensions and evaluation‑board information.
| Usable Frequency Range | 800 to 1000 MHz |
|---|---|
| Typical Output Power @ 5.8 V | 36.0 dBm |
| Typical Output Power @ 4.8 V | 35.0 dBm |
| Minimum Power Added Efficiency | 48 % |
| Supply Voltage (max) | 9 V |
| Ambient Operating Temperature | -40 °C to +85 °C |
| Thermal Resistance, Junction‑to‑Case | 10 °C·W |
| Package Type | PFP‑16 Power Flat Package |
| Device Marking | M0913 (PFP‑16) |
The MRFIC0913 operates from 800 MHz to 1000 MHz.
At 4.8 V the typical output power is 35.0 dBm.
It is shipped in a PFP‑16 Power Flat Package.
The device provides a minimum power‑added efficiency of 48 %.