KSR1001 is a NPN Epitaxial Silicon Transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-base voltage is 50V, maximum collector-emitter voltage is 50V, maximum emitter-base voltage is 10V, maximum collector current is 100mA, maximum collector power dissipation is 300mW, and maximum junction temperature is 150℃. Storage temperature range is -55℃ to 150℃.
The KSR1001 is an NPN epitaxial silicon transistor designed for switching applications such as inverters, driver circuits, and interface circuits. It includes built‑in bias resistors (R1=4.7 kΩ, R2=4.7 kΩ) and is offered in a standard TO‑92 package.
The datasheet provides absolute maximum ratings, typical electrical characteristics, package dimensions, and product status information. It also lists Fairchild’s trademark notices and liability disclaimer.
| Collector‑Base Voltage (V CBO) | 50 V |
|---|---|
| Collector‑Emitter Voltage (V CEO) | 50 V |
| Emitter‑Base Voltage (V EBO) | 10 V |
| Collector Current (I C) | 100 mA |
| Power Dissipation (P) | 300 mW |
| Junction Temperature (T j) | 150 °C |
| Storage Temperature (T st) | -55 °C to 150 °C |
| Input Resistor (R y) | 4.7 kΩ |
| Resistor Ratio (R4/Ap) | 0.9 – 1.1 |
The collector‑emitter breakdown voltage is 50 V.
The built‑in bias resistors are both 4.7 kΩ (R1=4.7 kΩ, R2=4.7 kΩ).