FJNS4203R is a PNP epitaxial silicon transistor with low power and high frequency characteristics. It is suitable for applications such as switching circuits, inverters, interface circuits, and driver circuits. Additionally, it features a built-in bias resistor.
The FJNS4203R is a PNP epitaxial silicon transistor with a built‑in bias resistor (Ry=22 kΩ, Rg=22 kΩ). It is intended for switching applications such as inverters, interface circuits, and driver circuits. The datasheet includes absolute maximum ratings, electrical characteristics, and typical performance curves.
Key specifications such as collector‑base voltage (‑50 V), collector‑emitter voltage (‑50 V), and a maximum collector current of 100 mA are listed, along with package dimensions for the TO‑928/TO‑92S case. Legal notices clarify that the device is not authorized for life‑support systems.
| Collector‑Emitter Voltage (Vceo) | -50 V |
|---|---|
| Emitter‑Base Voltage (Vebo) | -10 V |
| Collector Current (Ic) | -100 mA |
| Collector Power Dissipation (Pc) | 300 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tst) | -55 ~ 150 °C |
| Built‑in Bias Resistor (Ry) | 22 kΩ |
| Resistor Ratio (Ry/Re) | 1.0 |
The maximum collector current is 100 mA.
It is supplied in a TO‑928 (TO‑92S) package.
No, Fairchild does not authorize its use in life‑support systems.
The built‑in bias resistors are 22 kΩ for both Ry and Rg.